类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 最小击穿电压 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SP8K2TB | ROHM Semiconductor | 数据表 | 2412 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 36 ns | 150°C TJ | Tape & Reel (TR) | 2004 | e2 | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 锡铜 | 30V | 2W | 鸥翼 | 260 | 6A | 10 | *K2 | 8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 9 ns | 2 N-Channel (Dual) | SWITCHING | 30m Ω @ 6A, 10V | 2.5V @ 1mA | 520pF @ 10V | 10.1nC @ 5V | 21ns | 13 ns | 6A | 20V | 6A | 0.047Ohm | 24A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN3016LDN-7 | Diodes Incorporated | 数据表 | 100 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 22 Weeks | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | 活跃 | 1 (Unlimited) | EAR99 | 1.1W | 未说明 | 未说明 | 1.1W | 2 N-Channel (Dual) | 20m Ω @ 11A, 10V | 2V @ 250μA | 1415pF @ 15V | 25.1nC @ 10V | 30V | 7.3A | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSZ0910NDXTMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | 8-PowerVDFN | 9.5A Ta 25A Tc | -55°C~150°C TJ | Tape & Reel (TR) | OptiMOS™ | 活跃 | 1 (Unlimited) | 未说明 | 未说明 | 1.9W Ta 31W Tc | 2 N-Channel (Dual) | 9.5m Ω @ 9A, 10V | 2V @ 250μA | 800pF @ 15V | 5.6nC @ 4.5V | 30V | Logic Level Gate, 4.5V Drive | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN1002UCA6-7 | Diodes Incorporated | 数据表 | 1018 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 6-SMD, No Lead | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | e4 | 活跃 | 1 (Unlimited) | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 未说明 | 未说明 | 1.1W | 2 N-Channel (Dual) Common Drain | 68.6nC @ 4V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4840E | Alpha & Omega Semiconductor Inc. | 数据表 | 150000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 6A Ta | -55°C~150°C TJ | Tape & Reel (TR) | AlphaMOS | 活跃 | 1 (Unlimited) | 2W | 2 N-Channel (Dual) | 28m Ω @ 6A, 10V | 2.6V @ 250μA | 520pF @ 20V | 10nC @ 4.5V | 40V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PMDPB80XP,115 | Nexperia USA Inc. | 数据表 | 2106000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 6-UDFN Exposed Pad | 6 | 120 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | 活跃 | 1 (Unlimited) | Tin (Sn) | 485mW | 6 | 2 | Dual | 6 ns | 2 P-Channel (Dual) | 102m Ω @ 2.7A, 4.5V | 1V @ 250μA | 550pF @ 10V | 8.6nC @ 4.5V | 14ns | 20V | 50 ns | 2.7A | -600mV | -20V | -20V | Logic Level Gate, 1.8V Drive | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDW2503N | ON Semiconductor | 数据表 | 6839 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | 5.5A | 2 | 24 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2000 | PowerTrench® | Obsolete | 1 (Unlimited) | SMD/SMT | 21MOhm | 150°C | -55°C | 20V | 600mW | 5.5A | 1W | 8 ns | 600mW | 2 N-Channel (Dual) | 21mOhm @ 5.5A, 4.5V | 1.5V @ 250μA | 1082pF @ 10V | 17nC @ 4.5V | 8ns | 20V | 8 ns | 5.5A | 12V | 20V | 20V | 1.082nF | 逻辑电平门 | 17mOhm | 21 mΩ | 800 mV | 1mm | 3mm | 4.4mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | BUK9K12-60EX | Nexperia USA Inc. | 数据表 | 255000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-1205, 8-LFPAK56 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 6 | 68W | 鸥翼 | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 68W | 2 N-Channel (Dual) | SWITCHING | 10.7m Ω @ 15A, 10V | 2.1V @ 1mA | 3470pF @ 25V | 24.5nC @ 5V | 60V | 35A | 0.0115Ohm | 204A | 60V | 118 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4882 | Alpha & Omega Semiconductor Inc. | 数据表 | 24000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 2 | 15 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | 活跃 | 1 (Unlimited) | 2W | 2W | 4 ns | 2 N-Channel (Dual) | 19m Ω @ 8A, 10V | 2.4V @ 250μA | 415pF @ 20V | 12nC @ 10V | 40V | 8A | 20V | 40V | 150°C | 逻辑电平门 | 1.75mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMC6A09DN8TA | Diodes Incorporated | 数据表 | 40 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 3.9A 3.7A | 2 | 55 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 55mOhm | Matte Tin (Sn) | 低阈值 | 2.1W | DUAL | 鸥翼 | 260 | 5.1A | 40 | 8 | 2 | 增强型MOSFET | 2.1W | 4.6 ns | 1.8W | N and P-Channel | SWITCHING | 45m Ω @ 8.2A, 10V | 1V @ 250μA (Min) | 1407pF @ 40V | 24.2nC @ 10V | 5.8ns | N-CHANNEL AND P-CHANNEL | 23 ns | 5.1A | 20V | 3.9A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
AO4629 | Alpha & Omega Semiconductor Inc. | 数据表 | 29700 In Stock | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 6A 5.5A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2W | DUAL | 鸥翼 | 8 | 增强型MOSFET | 2W | N and P-Channel, Common Drain | SWITCHING | 30m Ω @ 6A, 10V | 2.4V @ 250μA | 310pF @ 15V | 6.3nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 5.5A | 20V | 6A | 0.03Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 50 pF | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BUK7K13-60EX | Nexperia USA Inc. | 数据表 | 13442 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-1205, 8-LFPAK56 | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2015 | 活跃 | 1 (Unlimited) | 6 | 64W | 鸥翼 | 未说明 | 未说明 | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 64W | 2 N-Channel (Dual) | SWITCHING | 10m Ω @ 10A, 10V | 4V @ 1mA | 2163pF @ 25V | 30.1nC @ 10V | 60V | 40A | 0.01Ohm | 213A | 60V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7342QTRPBF | Infineon Technologies | 数据表 | 35084 In Stock | - | 最小起订量: 1 最小包装量: 1 | 30 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 3.4A | 2 | 43 ns | Cut Tape (CT) | 2014 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 150°C | -55°C | 2W | IRF7342QPBF | 2W | 14 ns | 2 P-Channel (Dual) | 105m Ω @ 3.4A, 10V | 1V @ 250μA | 690pF @ 25V | 38nC @ 10V | 10ns | 55V | 22 ns | -3.4A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | STL20DN10F7 | STMicroelectronics | 数据表 | 79999 In Stock | - | 最小起订量: 1 最小包装量: 1 | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | 11 ns | -55°C~150°C TJ | Cut Tape (CT) | DeepGATE™, STripFET™ VII | 活跃 | 1 (Unlimited) | 6 | EAR99 | 65mOhm | 62.5W | FLAT | 未说明 | 未说明 | STL20 | R-PDSO-F6 | 2 | Dual | 增强型MOSFET | DRAIN | 6.3 ns | 2 N-Channel (Dual) | SWITCHING | 67m Ω @ 2.5A, 10V | 4.5V @ 250μA | 408pF @ 50V | 7.8nC @ 10V | 3ns | 100V | 4 ns | 20A | 20V | 100V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
NTMFD4902NFT3G | ON Semiconductor | 数据表 | 9540 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 10.3A 13.3A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.16W | FLAT | 10 | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 排水源头 | 1.1W 1.16W | 2 N-Channel (Dual), Schottky | SWITCHING | 6.5m Ω @ 10A, 10V | 2.2V @ 250μA | 1150pF @ 15V | 9.7nC @ 4.5V | 30V | 13.3A | 20V | 13.5A | 0.01Ohm | 60A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2011UFX-7 | Diodes Incorporated | 数据表 | 93 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 表面贴装 | 4-VFDFN Exposed Pad | 12.2A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e4 | 活跃 | 1 (Unlimited) | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.1W | 未说明 | 未说明 | 2 N-Channel (Dual) | 9.5m Ω @ 10A, 4.5V | 1V @ 250μA | 2248pF @ 10V | 56nC @ 10V | 20V | 12.2A | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2N7002V-7 | Diodes Incorporated | 数据表 | 187 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 3.005049mg | SILICON | 2 | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | 7.5Ohm | Matte Tin (Sn) | HIGH RELIABILITY | 60V | 150mW | FLAT | 260 | 280mA | 40 | 6 | 2 | Dual | 增强型MOSFET | 150mW | 20 ns | 2 N-Channel (Dual) | SWITCHING | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | 50pF @ 25V | 280mA | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | 5 pF | 60V | 600μm | 1.6mm | 1.2mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
EFC6605R-TR | ON Semiconductor | 数据表 | 4000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 7 Weeks | ACTIVE (Last Updated: 5 days ago) | 表面贴装 | 表面贴装 | 6-SMD, No Lead | 6 | 65.99769mg | 44.4 μs | 150°C TJ | Tape & Reel (TR) | yes | 不用于新设计 | 1 (Unlimited) | EAR99 | 1.6W | 2 | 154 ns | 2 N-Channel (Dual) | 19.8nC @ 4.5V | 678ns | 20V | 60.8 μs | 10A | 10V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 2.5V Drive | 13.3mOhm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NTMFD4C85NT1G | ON Semiconductor | 数据表 | 3000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 24 Weeks | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 15.4A 29.7A | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | yes | Obsolete | 1 (Unlimited) | 1.13W | 2 N-Channel (Dual) Asymmetrical | 3m Ω @ 20A, 10V | 2.1V @ 250μA | 1960pF @ 15V | 32nC @ 10V | 30V | 29.7A | Standard | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2040LTS-13 | Diodes Incorporated | 数据表 | 21460 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 24 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 157.991892mg | SILICON | 6.7A Ta | 2 | 19.8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 低温保持 | 890mW | 鸥翼 | 260 | 40 | 8 | 增强型MOSFET | 890mW | 5.2 ns | 2 N-Channel (Dual) Common Drain | SWITCHING | 26m Ω @ 6A, 4.5V | 1.2V @ 250μA | 570pF @ 10V | 5.2nC @ 4.5V | 13.5ns | 6.1 ns | 6.7A | 12V | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | 1.025mm | 4.5mm | 3.1mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
![]() | CSD75211W1723 | Texas Instruments | 数据表 | 1145 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 12-UFBGA, DSBGA | 12 | SILICON | 2 | 9.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e1 | no | Obsolete | 1 (Unlimited) | 12 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.5W | BOTTOM | BALL | 260 | CSD75211 | 12 | Dual | 增强型MOSFET | 1.5W | 3.7 ns | 2 P-Channel (Dual) | SWITCHING | 40m Ω @ 2A, 4.5V | 1.1V @ 250μA | 600pF @ 10V | 5.9nC @ 4.5V | 4.1ns | 20V | 1.6 ns | 4.5A | -700mV | 8V | 0.07Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -700 mV | 无 | 无SVHC | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||
NDS8858H | ON Semiconductor | 数据表 | 10682 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | 6.3A 4.8A | 2 | 40 ns | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 1W | 4.8A | 2.5W | N and P-Channel | 35m Ω @ 4.8A, 10V | 2.8V @ 250μA | 720pF @ 15V | 30nC @ 10V | 20ns | 19 ns | 4.8A | 20V | 30V | 逻辑电平门 | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDG6313N | ON Semiconductor | 数据表 | 3674 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | SC-88 (SC-70-6) | 500mA | 2 | 17 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2002 | Obsolete | 1 (Unlimited) | 150°C | -55°C | 25V | 300mW | 500mA | Dual | 300mW | 300mW | 2 N-Channel (Dual) | 450mOhm @ 500mA, 4.5V | 1.5V @ 250μA | 50pF @ 10V | 2.3nC @ 4.5V | 8.5ns | 25V | 8.5 ns | 500mA | 8V | 25V | 50pF | 逻辑电平门 | 340mOhm | 450 mΩ | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
NDS9959 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | 2 | 9 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1998 | Obsolete | 1 (Unlimited) | 50V | 900mW | 2A | Dual | 2W | 2 N-Channel (Dual) | 300m Ω @ 1.5A, 10V | 4V @ 250μA | 250pF @ 25V | 15nC @ 10V | 8ns | 11 ns | 2A | 20V | 50V | Standard | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD75205W1015 | Texas Instruments | 数据表 | 1395 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-UFBGA, DSBGA | 6 | SILICON | 2 | 32 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | no | Obsolete | 1 (Unlimited) | 6 | EAR99 | 750mW | BOTTOM | BALL | 未说明 | 未说明 | CSD75205 | 6 | 不合格 | Dual | 增强型MOSFET | 750mW | 6.3 ns | 2 P-Channel (Dual) | SWITCHING | 120m Ω @ 1A, 4.5V | 850mV @ 250μA | 265pF @ 10V | 2.2nC @ 4.5V | 5.3ns | 20V | 17 ns | 1.2A | -650mV | -6V | 0.18Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 33 pF | 无SVHC | ROHS3 Compliant | 含铅 |
SP8K2TB
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMN3016LDN-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
1.728541
BSZ0910NDXTMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
DMN1002UCA6-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
6.315215
AO4840E
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
4.180197
PMDPB80XP,115
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
2.780638
FDW2503N
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
6.128079
BUK9K12-60EX
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
21.631314
AO4882
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
ZXMC6A09DN8TA
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
17.935375
AO4629
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
BUK7K13-60EX
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
14.072803
IRF7342QTRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
STL20DN10F7
STMicroelectronics
分类:Transistors - FETs, MOSFETs - Arrays
NTMFD4902NFT3G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
8.486827
DMN2011UFX-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
2.354645
2N7002V-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
EFC6605R-TR
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
6.137592
NTMFD4C85NT1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMN2040LTS-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
5.193488
CSD75211W1723
Texas Instruments
分类:Transistors - FETs, MOSFETs - Arrays
NDS8858H
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FDG6313N
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NDS9959
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
CSD75205W1015
Texas Instruments
分类:Transistors - FETs, MOSFETs - Arrays
